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Publication Detail / Abstract

A. Fête, C. Cancellieri, D. Li, D. Stornaiuolo, A. D. Caviglia, S. Gariglio, J.-M. Triscone

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

published in Applied Physics Letters on February 5, 2015
> Full text via publisher
We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm2 V−1 s−1) and the lowest sheet carrier density (≈5 × 1012 cm−2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2 – 5 × 1013 cm−2 and mobilities of ≈1000 cm2 V−1 s−1 at 4 K. Reducing their carrier density by field effect to 8 × 1012 cm−2 lowers their mobilities to ≈50 cm2 V−1 s−1 bringing the conductance to the weak-localization regime.
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