next Q-MAC meetings in 2018:

3rd Q-MAC symposium in Venice, May 22-25, 2018.

Next regular meeting in Paris,       November 27-28, 2018.

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Antoine Georges leads the CCQ in New York

at the newly founded Flatiron Institute of the Simons Foundation.

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Publication Detail / Abstract

M. Mitrano, G. Cotugno, S. R. Clark, R. Singla, S. Kaiser, J. Stähler, R. Beyer, M. Dressel, L. Baldassarre, D. Nicoletti, A. Perucchi, T. Hasegawa, H. Okamoto, D. Jaksch, A. Cavalleri

Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET–F2 TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates

published in PRL on March 18, 2014
> Full text via publisher
We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET–F2 TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
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